Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells

In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si...

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Bibliographic Details
Published in:IEEE electron device letters 2009-07, Vol.30 (7), p.724-726
Main Authors: HORNG, Ray-Hua, LIN, Shih-Ting, TSAI, Yu-Li, CHU, Mu-Tao, LIAO, Wen-Yih, WU, Ming-Hsien, LIN, Ray-Ming, LU, Yuan-Chieh
Format: Article
Language:English
Subjects:
Absorption
Applied sciences
Compound structure devices
Electronics
Energy
Exact sciences and technology
Gallium nitride
Laser lift-off
Microelectronic fabrication (materials and surfaces technology)
Mirrors
Natural energy
Optical device fabrication
Optoelectronic devices
Photovoltaic cells
Photovoltaic conversion
Photovoltaic systems
PIN photodiodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor thin films
Solar cells. Photoelectrochemical cells
Solar energy
Solar power generation
thin-film solar cell
Transistors
wafer bonding
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Summary:In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2021414