Growth of various antimony-containing alloys by MOVPE

GaInPSb bulk and superlattice layers have been grown by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures on exact and misorientated InP substrates. Optical and structural studies of the properties of the material reveal that phase separation plays an important role in the growth...

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Bibliographic Details
Published in:Journal of crystal growth 2008-11, Vol.310 (23), p.4835-4838
Main Authors: Grasse, Christian, Meyer, Ralf, Breuer, Uwe, Böhm, Gerhard, Amann, Markus-Christian
Format: Article
Language:English
Subjects:
A1. Characterization
A1. Crystal structure
A3. Metal organic vapour phase epitaxy
B1. Antimonides
B2. Semiconducting III–V materials
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Vapor phase epitaxy
growth from vapor phase
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Summary:GaInPSb bulk and superlattice layers have been grown by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures on exact and misorientated InP substrates. Optical and structural studies of the properties of the material reveal that phase separation plays an important role in the growth of this alloy, which is indicated by very broad linewidths in low-temperature photoluminescence (PL) measurements. To explain this behaviour simple miscibility gap calculations for the materials GaInPSb, GaInAsSb and GaInAsP have been performed using the regular solution model. A comparative growth analysis of GaInAsP, GaInPSb bulk and InPSb, GaInAsSb and GaAsSb superlattice structures showed that just the phosphorus- and antimony-containing alloys exhibited the broad low temperature (4 K) PL linewidths (FWHM) of about 50–100 meV. So it can be assumed that due to the large difference in binding energies phosphorus-containing antimonides require much more effort for good crystal quality than equal arsenical alloys.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.06.078