Imprint Lithography with 25-Nanometer Resolution

A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the p...

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Bibliographic Details
Published in:	Science (American Association for the Advancement of Science) 1996-04, Vol.272 (5258), p.85-87
Main Authors:	Chou, Stephen Y., Krauss, Peter R., Renstrom, Preston J.
Format:	Article
Language:	eng
Subjects:	Applied sciences Aspect ratio Electrical engineering Electronics Etching Exact sciences and technology Glass transition temperature Innovations Integrated circuits Lithography Lithography (Printing) Microelectronic fabrication (materials and surfaces technology) Molding Nanotechnology Oxygen Polymers Printing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon
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Summary:	A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint lithography in combination with a lift-off process. With further development, imprint lithography should allow fabrication of sub-10-nanometer structures and may become a commercially viable technique for manufacturing integrated circuits and other nanodevices.
ISSN:	0036-8075 1095-9203