Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Photoluminescence excitation spectra of erbium ions in the epitaxial Si:Er/Si structures have been measured in a wide range of excitation wavelengths (λex=800–1580nm) including the range of direct optical excitation of Er (λex=1460–1580nm). The temperature quenching of erbium PL have been compared f...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4601-4603
Main Authors: Yablonskiy, A.N., Krasilnikova, L.V., Andreev, B.A., Kryzhkov, D.I., Kuznetsov, V.P., Krasilnik, Z.F.
Format: Article
Language:eng ; rus
Subjects:
Erbium
Luminescence
Silicon
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Summary:Photoluminescence excitation spectra of erbium ions in the epitaxial Si:Er/Si structures have been measured in a wide range of excitation wavelengths (λex=800–1580nm) including the range of direct optical excitation of Er (λex=1460–1580nm). The temperature quenching of erbium PL have been compared for the regimes of direct optical excitation and excitation by photo-generated carriers in silicon matrix. It has been demonstrated that in case of direct optical excitation of Er ions the temperature quenching of Er PL was much weaker than under band-to-band pumping and the major processes of erbium non-radiative deexcitation such as Auger-deexcitation with equilibrium free carriers and “back-transfer” are substantially suppressed.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.08.135