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Plasma generation in silicon-based inductive grid arrays
Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.
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Published in: | Optics and lasers in engineering 2009-11, Vol.47 (11), p.1195-1198 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented. |
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ISSN: | 0143-8166 1873-0302 |
DOI: | 10.1016/j.optlaseng.2009.06.006 |