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Plasma generation in silicon-based inductive grid arrays

Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.

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Bibliographic Details
Published in:Optics and lasers in engineering 2009-11, Vol.47 (11), p.1195-1198
Main Authors: Kontogeorgos, A.A., Korfiatis, D.P., Thoma, K.A.Th, Vardaxoglou, J.C.
Format: Article
Language:English
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Summary:Selective illumination of a silicon wafer can be used for the construction of non-permanent inductive grids. A numerical model is used for the calculation of plasma density distribution in silicon as a function of time. Some indicative results on the microwave properties of the device are presented.
ISSN:0143-8166
1873-0302
DOI:10.1016/j.optlaseng.2009.06.006