Pentacene TFTs with parylene passivation layer

We have fabricated bottom contact pentacene TFTs on flexible polyimide substrate and silicon substrate using different passivation layers in order to reduce the electrical instability of pentacene devices, induced by water diffusion in the film, as evidenced by electrical measurements under differen...

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Bibliographic Details
Published in:Thin solid films 2009-10, Vol.517 (23), p.6283-6286
Main Authors: Simeone, D., Cipolloni, S., Mariucci, L., Rapisarda, M., Minotti, A., Pecora, A., Cuscunà, M., Maiolo, L., Fortunato, G.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Diffusion
interface formation
Electronics
Environmental stability
Exact sciences and technology
Passivation layer
Pentacene TFT
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Transistors
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Summary:We have fabricated bottom contact pentacene TFTs on flexible polyimide substrate and silicon substrate using different passivation layers in order to reduce the electrical instability of pentacene devices, induced by water diffusion in the film, as evidenced by electrical measurements under different environments. Experimental data show that parylene passivation layer does not introduce appreciable degradation of device characteristics and allows standard lithographic process, but it is not an effective barrier for water diffusion. The encapsulation of pentacene TFTs with an additional acryl layer does not reduce the device sensitivity to the water, whereas devices encapsulated by a parylene/acryl/aluminum triple layer do not show increase of transfer characteristics hysteresis when measured in air.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.02.088