Point defects in group-III nitride semiconductors studied by positron annihilation

Positron annihilation is an established technique for investigating vacancy-type defects in semiconductors. When a positron is implanted into solids, it annihilates with an electron and emits two 511 keV γ quanta. From measurements of Doppler broadening spectra of the annihilation radiation and the...

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Bibliographic Details
Published in:Journal of crystal growth 2009-05, Vol.311 (10), p.3075-3079
Main Authors: Uedono, A., Ishibashi, S., Ohdaira, T., Suzuki, R.
Format: Article
Language:English
Subjects:
A1. Characterization
A1. Doping
A1. Point defects
A3. Metalorganic chemical vapor deposition
B2. Semiconducting III–V materials
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Electron states
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of electronic structure calculations
Other semiconductors
Physics
Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
Specific materials
Structure of solids and liquids
crystallography
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Summary:Positron annihilation is an established technique for investigating vacancy-type defects in semiconductors. When a positron is implanted into solids, it annihilates with an electron and emits two 511 keV γ quanta. From measurements of Doppler broadening spectra of the annihilation radiation and the positron lifetimes, one can detect vacancy-type defects such as monovacancies and divacancies. We used monoenergetic positron beams to study vacancies in ion-implanted and rare-earth-doped GaN. We identified the defect species and estimated their concentrations from a comparison between the Doppler broadening spectra obtained through the experiments and those calculated using first-principles calculation (projector augmented-wave method). We have thus shown that positron annihilation is a useful tool for studying relationships between vacancy-type defects and properties of group-III nitrides.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.01.051