Hall effect of photocurrent in CVD diamond film

Transient Hall voltage of photocurrent excited by the modulated light with photon energies near bandgap is observed in undoped and B-doped CVD diamond films. It is seen that photo-carriers created in the films by the band-to-band excitation higher than 5.5 eV are almost holes and the contribution of...

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Bibliographic Details
Published in:Diamond and related materials 2009-05, Vol.18 (5), p.779-781
Main Authors: Kubo, Takehito, Nomura, Yukio, Murayama, Kazuro, Ogura, Masahiko, Ri, Sung-Gi, Yamasaki, Satoshi, Okushi, Hideyo
Format: Article
Language:English
Subjects:
Bandgap state
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
CVD Diamond
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Hall effect
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Photoconduction and photovoltaic effects
photodielectric effects
Photocurrent
Physics
Specific materials
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Summary:Transient Hall voltage of photocurrent excited by the modulated light with photon energies near bandgap is observed in undoped and B-doped CVD diamond films. It is seen that photo-carriers created in the films by the band-to-band excitation higher than 5.5 eV are almost holes and the contribution of electrons is about 7% in the undoped film and 0% in the B-doped film. Photo-carriers excited by the light with photon energies 4.7 to 5.5 eV, in which the step-like absorption band is observed, are holes, which agrees with the result of the temperature dependence of the photocurrent excited by the light with the photon energies.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2009.02.001