A 0.6-V Low Power UWB CMOS LNA

This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-mum CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2007-03, Vol.17 (3), p.229-231
Main Authors: Yueh-Hua Yu, Chen, Y.-J.E., Heo, D.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Applied sciences
Bandwidth
Broadband
Broadband amplifiers
Circuit properties
CMOS
CMOS technology
Design. Technologies. Operation analysis. Testing
distributed amplifier
Distributed amplifiers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Energy consumption
Exact sciences and technology
Frequency
Gain
Gain measurement
Integrated circuits
low noise amplifier (LNA)
low power
Low-noise amplifiers
Microwaves
Noise
Noise figure
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultra wideband technology
ultra-wideband (UWB)
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Summary:This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-mum CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is cascaded to the distributed amplifier to improve the gain at high frequency and extend the bandwidth. Operated at 0.6V, the integrated UWB CMOS LNA consumes 7mW. The measured gain of the LNA is 10dB with the bandwidth from 2.7 to 9.1GHz. The input and output return loss is more than 10dB. The noise figure of the LNA varies from 3.8 to 6.9dB, with the average noise figure of 4.65dB. The low power consumption of this work leads to the excellent figure of gain-bandwidth product (GBP) per milliwatt
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.890502