Polarization-angle dependence of photoluminescence intensity of ordered GaInP2 layers: observation of polarization memory

We compare measured and calculated polarization‐angle dependencies of the intensity of the photoluminescence emission from MOVPE‐grown GaInP2 layers with different ordering parameters. We measured the polarization‐angle dependencies of the emission propagating along the [001], [110] and [1$ \bar 1 $...

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Bibliographic Details
Published in:Crystal research and technology (1979) 2008-09, Vol.43 (9), p.975-979
Main Authors: Prutskij, T., Pelosi, C., Brito-Orta1, R.
Format: Article
Language:English
Subjects:
III-V semiconductors
photoluminescence
Online Access:Get full text
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Summary:We compare measured and calculated polarization‐angle dependencies of the intensity of the photoluminescence emission from MOVPE‐grown GaInP2 layers with different ordering parameters. We measured the polarization‐angle dependencies of the emission propagating along the [001], [110] and [1$ \bar 1 $0] directions at room temperature. Symmetry considerations were used to calculate the dependence of the relative intensity of the PL emission which was linearly polarized along different directions and to estimate the value of the valence‐band splitting by fitting the measured dependencies with calculated curves. An intriguing influence of the polarization of the exciting beam on the relative amount of the polarized PL emission was observed in the emission from the (110) plane. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.200800079