The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures

The room temperature photoluminescence from silicon nitride multilayer structures, grown by plasma enhanced chemical vapour deposition, is monitored for different annealing temperatures and is correlated to structural and molecular changes in the film. Use of various annealing temperatures from 600...

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Bibliographic Details
Published in:Journal of crystal growth 2008-07, Vol.310 (15), p.3680-3684
Main Authors: Scardera, G., Puzzer, T., Perez-Wurfl, I., Conibeer, G.
Format: Article
Language:English
Subjects:
A1. Nanocrystals
A1. Photoluminescence
A3. Chemical vapor deposition
A3. Thin film multilayers
B1. Silicon
B1. Silicon nitride
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Description
Summary:The room temperature photoluminescence from silicon nitride multilayer structures, grown by plasma enhanced chemical vapour deposition, is monitored for different annealing temperatures and is correlated to structural and molecular changes in the film. Use of various annealing temperatures from 600 °C to 1150 °C results in films which vary from being completely amorphous to an amorphous matrix containing silicon nanocrystals, and finally to a fully crystallized composite containing silicon, α -Si 3N 4 and β -Si 3N 4 nanocrystals. Coupled with the observed trends seen with grazing incidence X-ray diffraction, transmission electron microscopy, and infra-red absorbance with annealing temperature, the photoluminescence from silicon nanocrystals embedded in amorphous silicon nitride is attributed to the presence of the nanocrystals in the film and not to transitions between band tails of the remaining amorphous matrix.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.05.018