A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium

In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2008-07, Vol.85 (7), p.1490-1494
Main Authors: Wu, Dake, Huang, Ru, Bu, Weihai, Zhou, Falong, Tian, Yu, Chen, Baoqin, Feng, Chuguang, Chan, Mansun, Wang, Yangyuan
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
H + and He + co-implantation
Integrated circuits
SDOI
SDOV
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
UTB SOI
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-LOGICAL-c310t-3c72b89170cf55e7385fc054339509f301066dcff5a86a61bc4230f1d9d71fa83
container_end_page 1494
container_issue 7
container_start_page 1490
container_title Microelectronic engineering
container_volume 85
creator Wu, Dake
Huang, Ru
Bu, Weihai
Zhou, Falong
Tian, Yu
Chen, Baoqin
Feng, Chuguang
Chan, Mansun
Wang, Yangyuan
description In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.
doi_str_mv 10.1016/j.mee.2008.01.079
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_33927519</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931708001019</els_id><sourcerecordid>33927519</sourcerecordid><originalsourceid>FETCH-LOGICAL-c310t-3c72b89170cf55e7385fc054339509f301066dcff5a86a61bc4230f1d9d71fa83</originalsourceid><addsrcrecordid>eNp9kE-PEzEMxSMEEmXhA3DLBQSHmbUnzWRGnFbLX2lRDwtcozRx2FQzSUmmlfrtSdUVR06Wrd97th9jrxFaBOyvd-1M1HYAQwvYghqfsBUOSjRS9sNTtqqMakaB6jl7UcoOar-GYcX8DY_pSBMv6ZAtXbtsQuQp8mMKjr-7_7j59Z5_39x__vSDh3k_0UxxIce3Jz4layZuU3Oem7iYJVRd8vzh5HL6TZGb6PgDTeEwv2TPvJkKvXqsV-xndbz92txtvny7vblrrEBYGmFVtx1GVGC9lKTEIL0FuRZilDB6AQh976z30gy96XFr150Aj250Cr0ZxBV7e_Hd5_TnQGXRcyiWpnofpUPR1ahTEscK4gW0OZWSyet9DrPJJ42gz4nqna6J6nOiGlDXRKvmzaO5KfV1n020ofwTdiABR9VV7sOFo_rpMVDWxQaKllzIZBftUvjPlr8WkIoX</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>33927519</pqid></control><display><type>article</type><title>A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium</title><source>ScienceDirect Journals</source><creator>Wu, Dake ; Huang, Ru ; Bu, Weihai ; Zhou, Falong ; Tian, Yu ; Chen, Baoqin ; Feng, Chuguang ; Chan, Mansun ; Wang, Yangyuan</creator><creatorcontrib>Wu, Dake ; Huang, Ru ; Bu, Weihai ; Zhou, Falong ; Tian, Yu ; Chen, Baoqin ; Feng, Chuguang ; Chan, Mansun ; Wang, Yangyuan</creatorcontrib><description>In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2008.01.079</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; H + and He + co-implantation ; Integrated circuits ; SDOI ; SDOV ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors ; UTB SOI</subject><ispartof>Microelectronic engineering, 2008-07, Vol.85 (7), p.1490-1494</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c310t-3c72b89170cf55e7385fc054339509f301066dcff5a86a61bc4230f1d9d71fa83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=20501972$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wu, Dake</creatorcontrib><creatorcontrib>Huang, Ru</creatorcontrib><creatorcontrib>Bu, Weihai</creatorcontrib><creatorcontrib>Zhou, Falong</creatorcontrib><creatorcontrib>Tian, Yu</creatorcontrib><creatorcontrib>Chen, Baoqin</creatorcontrib><creatorcontrib>Feng, Chuguang</creatorcontrib><creatorcontrib>Chan, Mansun</creatorcontrib><creatorcontrib>Wang, Yangyuan</creatorcontrib><title>A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium</title><title>Microelectronic engineering</title><description>In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>H + and He + co-implantation</subject><subject>Integrated circuits</subject><subject>SDOI</subject><subject>SDOV</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>UTB SOI</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kE-PEzEMxSMEEmXhA3DLBQSHmbUnzWRGnFbLX2lRDwtcozRx2FQzSUmmlfrtSdUVR06Wrd97th9jrxFaBOyvd-1M1HYAQwvYghqfsBUOSjRS9sNTtqqMakaB6jl7UcoOar-GYcX8DY_pSBMv6ZAtXbtsQuQp8mMKjr-7_7j59Z5_39x__vSDh3k_0UxxIce3Jz4layZuU3Oem7iYJVRd8vzh5HL6TZGb6PgDTeEwv2TPvJkKvXqsV-xndbz92txtvny7vblrrEBYGmFVtx1GVGC9lKTEIL0FuRZilDB6AQh976z30gy96XFr150Aj250Cr0ZxBV7e_Hd5_TnQGXRcyiWpnofpUPR1ahTEscK4gW0OZWSyet9DrPJJ42gz4nqna6J6nOiGlDXRKvmzaO5KfV1n020ofwTdiABR9VV7sOFo_rpMVDWxQaKllzIZBftUvjPlr8WkIoX</recordid><startdate>20080701</startdate><enddate>20080701</enddate><creator>Wu, Dake</creator><creator>Huang, Ru</creator><creator>Bu, Weihai</creator><creator>Zhou, Falong</creator><creator>Tian, Yu</creator><creator>Chen, Baoqin</creator><creator>Feng, Chuguang</creator><creator>Chan, Mansun</creator><creator>Wang, Yangyuan</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20080701</creationdate><title>A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium</title><author>Wu, Dake ; Huang, Ru ; Bu, Weihai ; Zhou, Falong ; Tian, Yu ; Chen, Baoqin ; Feng, Chuguang ; Chan, Mansun ; Wang, Yangyuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c310t-3c72b89170cf55e7385fc054339509f301066dcff5a86a61bc4230f1d9d71fa83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>H + and He + co-implantation</topic><topic>Integrated circuits</topic><topic>SDOI</topic><topic>SDOV</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>UTB SOI</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Dake</creatorcontrib><creatorcontrib>Huang, Ru</creatorcontrib><creatorcontrib>Bu, Weihai</creatorcontrib><creatorcontrib>Zhou, Falong</creatorcontrib><creatorcontrib>Tian, Yu</creatorcontrib><creatorcontrib>Chen, Baoqin</creatorcontrib><creatorcontrib>Feng, Chuguang</creatorcontrib><creatorcontrib>Chan, Mansun</creatorcontrib><creatorcontrib>Wang, Yangyuan</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Dake</au><au>Huang, Ru</au><au>Bu, Weihai</au><au>Zhou, Falong</au><au>Tian, Yu</au><au>Chen, Baoqin</au><au>Feng, Chuguang</au><au>Chan, Mansun</au><au>Wang, Yangyuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium</atitle><jtitle>Microelectronic engineering</jtitle><date>2008-07-01</date><risdate>2008</risdate><volume>85</volume><issue>7</issue><spage>1490</spage><epage>1494</epage><pages>1490-1494</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><abstract>In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2008.01.079</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0167-9317
ispartof Microelectronic engineering, 2008-07, Vol.85 (7), p.1490-1494
issn 0167-9317
1873-5568
language eng
recordid cdi_proquest_miscellaneous_33927519
source ScienceDirect Journals
subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
H + and He + co-implantation
Integrated circuits
SDOI
SDOV
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
UTB SOI
title A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-21T12%3A53%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20novel%20source/drain%20on%20void%20(SDOV)%20MOSFET%20implemented%20by%20local%20co-implantation%20of%20hydrogen%20and%20helium&rft.jtitle=Microelectronic%20engineering&rft.au=Wu,%20Dake&rft.date=2008-07-01&rft.volume=85&rft.issue=7&rft.spage=1490&rft.epage=1494&rft.pages=1490-1494&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2008.01.079&rft_dat=%3Cproquest_cross%3E33927519%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c310t-3c72b89170cf55e7385fc054339509f301066dcff5a86a61bc4230f1d9d71fa83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=33927519&rft_id=info:pmid/&rfr_iscdi=true