A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium

In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2008-07, Vol.85 (7), p.1490-1494
Main Authors: Wu, Dake, Huang, Ru, Bu, Weihai, Zhou, Falong, Tian, Yu, Chen, Baoqin, Feng, Chuguang, Chan, Mansun, Wang, Yangyuan
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
H + and He + co-implantation
Integrated circuits
SDOI
SDOV
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
UTB SOI
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.01.079