High-temperature ferromagnetism in laser-deposited layers of silicon and germanium doped with manganese or iron impurities

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high- T c diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperatu...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2009-04, Vol.321 (7), p.690-694
Main Authors: Demidov, E.S., Aronzon, B.A., Gusev, S.N., Karzanov, V.V., Lagutin, A.S., Lesnikov, V.P., Levchuk, S.A., Nikolaev, S.N., Perov, N.S., Podolskii, V.V., Rylkov, V.V., Sapozhnikov, M.V., Lashkul, A.V.
Format: Article
Language:eng ; rus
Subjects:
3d-impurity
Anomalous Hall effect
Epitaxial film
Ferromagnetic resonance
Ferromagnetism
Kerr effect
Supersaturated semiconductor
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Summary:The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high- T c diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T g=(20–550) °C on single-crystal GaAs or Al 2O 3 substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5–500 K. The optimum growth temperature, T g, for Si:Mn/GaAs layers with T c≈400 K is shown to be about 400 °C. The Si:Mn/Al 2O 3 layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic layers have strongly different magnetic and electric properties in case of uniformly doped structures and digital alloys. Positive results of the Fermi level variation effect on the improvement of Si- and Ge-based DMS layers have been gained on the use of additional doping with shallow acceptor Al impurity which contributes to the increase of the hole concentration and the RKKY exchange interaction of 3d-ions. The Ge:(Mn, Al)/GaAs or Ge (Mn, Al)/Si layers grown at 20 °C feature surprising extraordinary angular dependence of FMR.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2008.11.026