Multi Fermi level pinning at metal/Cu(InGa)(SeS) 2 interfaces

Metal contacts to chemically etched Cu(InGa)(SeS) 2 layers have been investigated using current–voltage and capacitance–voltage techniques. Oxidising chemicals enhance the Fermi level pinning at metal/Cu(InGa)(SeS) 2 interfaces. The formation of a Schottky barrier at metal/p-Cu(InGa)(SeS) 2 interfac...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2008-08, Vol.92 (8), p.923-928
Main Authors: Dharmadasa, I.M., Chaure, N.B., Samantilleke, A.P., Hassan, A.
Format: Article
Language:English
Subjects:
Applied sciences
Cu(InGa)(SeS) 2
Defects in semiconductors
Energy
Exact sciences and technology
Fermi level pinning
Natural energy
Photovoltaic conversion
Schottky barriers
Solar cells. Photoelectrochemical cells
Solar energy
Solar energy materials
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Summary:Metal contacts to chemically etched Cu(InGa)(SeS) 2 layers have been investigated using current–voltage and capacitance–voltage techniques. Oxidising chemicals enhance the Fermi level pinning at metal/Cu(InGa)(SeS) 2 interfaces. The formation of a Schottky barrier at metal/p-Cu(InGa)(SeS) 2 interface is dominated by Fermi level pinning at one of the four levels, 0.77±0.02, 0.84±0.02, 0.93±0.02 and 1.03±0.02 eV above the valence band maximum. These observed levels determined from current–voltage measurements show a good agreement with some of the previously published photoluminescence, deep level transient spectroscopy and photo acoustic spectroscopy observations. The capacitance–voltage measurements showed that this material has near ideal doping concentration of 1.0×10 16 cm −3 for fabricating solar cell devices.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2008.02.025