Electrical Modeling of Thin-Film Transistors

An overview of device physics-oriented electrical modeling of thin-film transistors (TFTs) is presented. Four specific models are considered: (i) square-law, (ii) 3-layer, (iii) comprehensive depletion-mode, and (iv) discrete trap. For each model, a functional assessment of model equations is undert...

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Bibliographic Details
Published in:Critical reviews in solid state and materials sciences 2008-04, Vol.33 (2), p.101-132
Main Authors: Hong, D., Yerubandi, G., Chiang, H. Q., Spiegelberg, M. C., Wager, J. F.
Format: Article
Language:English
Subjects:
3-layer model
Applied sciences
channel mobility
comprehensive depletion-mode model
conductance integral equation
device modeling
discrete trap model
Electrical engineering
Electronics
Exact sciences and technology
fringing current artifacts
Materials
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
series resistance
square-law model
Thin films
thin-film transistor
Transistors
trapping
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Summary:An overview of device physics-oriented electrical modeling of thin-film transistors (TFTs) is presented. Four specific models are considered: (i) square-law, (ii) 3-layer, (iii) comprehensive depletion-mode, and (iv) discrete trap. For each model, a functional assessment of model equations is undertaken in terms of independent and dependent variables, model parameters, physical operating parameters, and constraining inequalities in order to facilitate mapping of model equations into a corresponding equivalent circuit. Channel mobility and "subthreshold" current trends are elucidated. Finally, a conductance integral equation based on Shockley's gradual channel approximation is introduced and is employed in model development and device assessment.
ISSN:1040-8436
1547-6561
2331-4583
DOI:10.1080/10408430701384808