Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1] ScN//[0 0 1] Si and [1 0 0] ScN//[1 0 0] Si, despite the high (11%) lattice mismatch between ScN and Si. The fi...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2008-05, Vol.310 (11), p.2746-2750
Main Authors: Moram, M.A., Novikov, S.V., Kent, A.J., Nörenberg, C., Foxon, C.T., Humphreys, C.J.
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
B1. Nitrides
B2. Scandium nitride
B2. Semiconducting III–V materials
B2. Semiconducting silicon
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Theory and models of film growth
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1] ScN//[0 0 1] Si and [1 0 0] ScN//[1 0 0] Si, despite the high (11%) lattice mismatch between ScN and Si. The film grain size increases and the film ω-FWHM decreases with increasing Sc flux, but the film roughness increases. Films grown under similar conditions on 111-oriented Si resulted in mixed 111 and 100 orientations, indicating that the 100 orientation is favoured both due to texture inheritance from the substrate and due to the growth conditions used.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.01.045