Different approaches to adjusting band offsets at intermolecular interfaces

We show that at the hetero-molecular interface, the molecular band offsets can be modified by either adjusting the dopant or dopant concentration of one or both molecular layers or by changing the dipole orientation at the intermolecular interface. Photoemission studies reveal the changes in electro...

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Bibliographic Details
Published in:Applied surface science 2008-05, Vol.254 (14), p.4238-4244
Main Authors: Dowben, P.A., Xiao, Jie, Xu, Bo, Sokolov, Andrei, Doudin, B.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Diffusion
interface formation
Electron and ion emission by liquids and solids
impact phenomena
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Ferroelectric polymers
Molecular orbital alignment
Organic heterojunctions
Photoemission and photoelectron spectra
Physics
Polymers and organic compounds
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:We show that at the hetero-molecular interface, the molecular band offsets can be modified by either adjusting the dopant or dopant concentration of one or both molecular layers or by changing the dipole orientation at the intermolecular interface. Photoemission studies reveal the changes in electronic structure and diode devices exhibit conduction properties that are altered in response to changes to the molecular band offsets. As a demonstration, thin film copper phthalocyanine to crystalline ferroelectric copolymer poly(vinylidene fluoride with trifluoroethylene) heterojunction diodes, without additional dopants, are compared with doped polyaniline layers on the crystalline ferroelectric copolymer poly(vinylidene fluoride with trifluoroethylene).
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.01.062