Growth and characterization of CdTe:Ge:Yb

Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×10 17 cm −3 and...

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Bibliographic Details
Published in:Journal of crystal growth 2008-04, Vol.310 (7), p.2076-2079
Main Authors: Sochinskii, N.V., Saucedo, E., Abellan, M., Rodríguez-Fernández, J., Hidalgo, P., Piqueras, J., Ruiz, C.M., Bermúdez, V., Diéguez, E.
Format: Article
Language:English
Subjects:
A2. Bridgman technique
A3. Vapor-phase epitaxy
B1. CdTe
B2. Semiconducting II–VI
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from melts
zone melting and refining
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Vapor phase epitaxy
growth from vapor phase
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Summary:Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×10 17 cm −3 and co-doped with the rare element Yb at the concentration range from 1×10 17 to 1×10 19 cm −3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×10 18 cm −3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.11.080