Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than Vth, information can be writte...

Full description

Saved in:
Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-11, Vol.19 (22), p.3919-3923
Main Authors: Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.
Format: Article
Language:English
Subjects:
Electronic structures
Electronics
Metals
Platinum
Switches
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than Vth, information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than Vth to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200700251