Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment

Abstract In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralizing or inducing compressive or tensile states) in suspended thin films. Emphasizing the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap gr...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2024-10, Vol.36 (43), p.431501
Main Authors: Masteghin, Mateus G, Murdin, Benedict N, Duffy, Dominic A, Clowes, Steven K, Cox, David C, Sweeney, Stephen J, Webb, Roger P
Format: Article
Language:English
Subjects:
direct bandgap semiconductors
ion implantation
quantum technology
tensile strain
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Summary:Abstract In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralizing or inducing compressive or tensile states) in suspended thin films. Emphasizing the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap group-IV semiconductor that is compatible with complementary metal–oxide–semiconductor technology, we underscore the distinctive features of different methods of ion beam-induced alteration of material morphology. The article examines the precautions needed during experimental procedures and data analysis and explores routes for potential scalable adoption by the semiconductor industry. Finally, we briefly discuss how this highly controllable strain-inducing technique can facilitate enhanced manipulation of impurity-based spin quantum bits (qubits).
ISSN:0953-8984
1361-648X
1361-648X
DOI:10.1088/1361-648X/ad649f