Degradation of magnetic tunneling junctions caused by pinhole formation and growth

A theory is developed to describe the pinhole formation and growth in magnetic tunneling junctions (MTJs) using the Kolmogorov–Avrami (KA) model. The theory relates the pinhole dynamics and the gradual degradation of the imperfect barrier layers and then the magnetic junctions under external stress....

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2007-12, Vol.319 (1), p.60-63
Main Authors: Xi, Haiwen, Franzen, Scott, Guzman, Javier I., Mao, Sining
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Magnetic tunneling junctions
Magnetoresistance
Physics
Pinholes
Resistance degradation
Spin polarized transport
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Summary:A theory is developed to describe the pinhole formation and growth in magnetic tunneling junctions (MTJs) using the Kolmogorov–Avrami (KA) model. The theory relates the pinhole dynamics and the gradual degradation of the imperfect barrier layers and then the magnetic junctions under external stress. Form this study, analytical expressions of junction resistance and magnetoresistive (MR) ratio as functions of time are provided to characterize the junction degradation.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2007.04.032