Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

We have investigated hexagonal silicon carbide with low dislocation density to reveal inherent dislocation types and structures using the bulk-sensitive synchrotron X-ray topography. This topographic study reveals that: (1) Basal-plane dislocations with the Burgers vector of 1 3 〈1 1 2 ¯ 0〉 preferre...

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Bibliographic Details
Published in:Journal of crystal growth 2007-06, Vol.304 (1), p.57-63
Main Authors: Nakamura, Daisuke, Yamaguchi, Satoshi, Gunjishima, Itaru, Hirose, Yoshiharu, Kimoto, Tsunenobu
Format: Article
Language:English
Subjects:
A1. X-ray topography
A2. Growth from vapor
B2. Semiconducting silicon compounds
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Exact sciences and technology
Growth from vapor
Linear defects: dislocations, disclinations
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Structure of solids and liquids
crystallography
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Summary:We have investigated hexagonal silicon carbide with low dislocation density to reveal inherent dislocation types and structures using the bulk-sensitive synchrotron X-ray topography. This topographic study reveals that: (1) Basal-plane dislocations with the Burgers vector of 1 3 〈1 1 2 ¯ 0〉 preferred to be screw dislocations along 〈1 1 2 ¯ 0〉 in straight shape. (2) Threading dislocations containing the Burgers vector component of 〈0 0 0 1〉 are mostly mixed dislocations containing that of 1 3 〈1 1 2 ¯ 0〉. (3) Threading edge dislocations with the Burgers vector of 1 3 〈1 1 2 ¯ 0〉 are of short lengths, about 30–100 μm. (4) All these dislocations are connected to convert, combine and dissociate to each other. We discuss the dislocation types and structures in terms of both the Peierls energy and elastic interaction. Moreover, we propose that the source of dislocations with the Burgers vector of 1 3 〈1 1 2 ¯ 0〉 is due to the propagation from a seed crystal rather than due to the Frank–Read mechanism.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.02.002