Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy

A new AlN polytype is grown on M-plane 6H-SiC by plasma-assisted molecular beam epitaxy. A 6H stacking order is deduced from reflection high-energy electron diffraction patterns and the occurrence of an additional [ 1 1 0 ¯ 0 ] 6 H reflection in X-ray diffraction ω−2 θ scans. A predominant 6H stacki...

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Bibliographic Details
Published in:Journal of crystal growth 2007-03, Vol.300 (1), p.127-129
Main Authors: Schaadt, D.M., Brandt, O., Trampert, A., Schönherr, H.-P., Ploog, K.H.
Format: Article
Language:English
Subjects:
A1. Crystal structure
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting aluminum compounds
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Single-crystal and powder diffraction
Structure of solids and liquids
crystallography
Theory and models of film growth
X-ray diffraction and scattering
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Summary:A new AlN polytype is grown on M-plane 6H-SiC by plasma-assisted molecular beam epitaxy. A 6H stacking order is deduced from reflection high-energy electron diffraction patterns and the occurrence of an additional [ 1 1 0 ¯ 0 ] 6 H reflection in X-ray diffraction ω−2 θ scans. A predominant 6H stacking, intersected by thin lamellae with 2H stacking, is directly observed in high-resolution transmission electron microscopy. Atomic force microscopy (AFM) shows a stripe-like morphology with a roughness of 1.7 nm and a peak-to-valley distance of 12 nm over 25 m 2. The AlN films are partially relaxed and of good crystal quality as evidenced from X-ray diffraction ω-scans with a line width of 130 arcsec for both symmetric and asymmetric reflections.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.11.004