Intersubband resonant enhancement of second-harmonic generation in GaN/AlN quantum wells

We report on the observation of resonant enhancement by intersubband transitions of the second-harmonic generation of 1 mum radiation in GaN/AlN quantum wells grown on AlN/c-sapphire templates. The quantum wells with a nominal well thickness of 10 monolayers have been investigated in terms of inters...

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Bibliographic Details
Main Authors: Nevou, L, Raybaut, M, Tchernycheva, M, Guillot, F, Monroy, E, Julien, F, Godard, A, Rosencher, E
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:We report on the observation of resonant enhancement by intersubband transitions of the second-harmonic generation of 1 mum radiation in GaN/AlN quantum wells grown on AlN/c-sapphire templates. The quantum wells with a nominal well thickness of 10 monolayers have been investigated in terms of intersubband linear and nonlinear optical properties. A strong increase of the second harmonic conversion is observed at a pump wavelength of 2 mum, which is attributed to double-resonance enhancement of the nonlinear susceptibility by intersubband transitions. The second-order susceptibility at resonance is of the order of 114 pm/V in good agreement with calculations and corresponds to a factor of 4 enhancement with respect to bulk GaN.
ISSN:0094-243X
DOI:10.1063/1.2729976