Molecular beam epitaxial growth of Cd1-yZnySexTe1-x on Si(211)

We report on the first successful growth of the quaternary alloy Cd1-yZnySexTe1-x(211) on 3-in. Si(211) substrates using molecular beam epitaxy (MBE). The growth of CdZnSeTe was performed using a compound CdTe effusion source, a compound ZnTe source, and an elemental Se effusion source. The alloy co...

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Bibliographic Details
Published in:Journal of electronic materials 2004-06, Vol.33 (6), p.498-502
Main Authors: CHEN, Y. P, BRILL, G, CAMPO, E. M, HIERL, T, HWANG, J. C. M, DHAR, N. K
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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Summary:We report on the first successful growth of the quaternary alloy Cd1-yZnySexTe1-x(211) on 3-in. Si(211) substrates using molecular beam epitaxy (MBE). The growth of CdZnSeTe was performed using a compound CdTe effusion source, a compound ZnTe source, and an elemental Se effusion source. The alloy compositions (x and y) of the Cd1-yZnySexTe1-x quaternary compound were controlled through the Se/CdTe and ZnTe/CdTe flux ratios, respectively. Our results indicated that the surface morphology of CdZnSeTe improves as the Zn concentration decreases, which fits well with our previous observation that the surface morphology of CdZnTe/Si is poorer than that of CdSeTe/Si. Although the x-ray full-width at half-maximums (FWHMs) of CdZnSeTe/Si with 4% of Zn + Se remain relatively constant regardless of the individual Zn and Se concentrations, etched-pit density (EPD) measurements exhibit a higher dislocation count on CdZnSeTe/Si layers with about 2% Zn and Se incorporated. The enhancement of threading dislocations in these alloys might be due to an alloy disorder effect between ZnSe and CdTe phases. Our results indicate that the CdZnSeTe/Si quaternary material with low Zn or low Se concentration (less than 1.5%) while maintaining 4% total Zn + Se concentration can be used as lattice-matching composite substrates for long-wavelength infrared (LWIR) HgCdTe as an alternative for CdZnTe/Si or CdSeTe/Si.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-004-0037-6