Electrical transport properties of single GaN and InN nanowires

The transport properties of single GaN and InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of temperature, annealing condition (for GaN) and length/square of radius ratio (for InN). The as-grown GaN nanowires were insulating and exhibited n-type conduct...

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Bibliographic Details
Published in:Journal of electronic materials 2006-04, Vol.35 (4), p.738-743
Main Authors: Chang, Chih-Yang, Chi, Gou-Chung, Wang, Wei-Ming, Chen, Li-Chyong, Chen, Kuei-Hsien, Ren, F., Pearton, S. J.
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Conductivity
Contact resistance
Diameters
Electric contacts
Electrical resistivity
Field effect transistors
Gallium nitrides
Gold
Indium nitride
Nanowires
Palladium
Positive temperature coefficient
Semiconductor devices
Silicon substrates
Temperature
Temperature dependence
Titanium
Transport properties
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Summary:The transport properties of single GaN and InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of temperature, annealing condition (for GaN) and length/square of radius ratio (for InN). The as-grown GaN nanowires were insulating and exhibited n-type conductivity (n ~ 2 × 10^sup 17^ cm^sup -3^, mobility of 30 cm^sup 2^/V s) after annealing at 700°C. A simple fabrication process for GaN nanowire field-effect transistors on Si substrates was employed to measure the temperature dependence of resistance. The transport was dominated by tunneling in these annealed nanowires. InN nanowires showed resistivity on the order of 4 × 10^sup -4^ ohm cm and the specific contact resistivity for unalloyed Pd/Ti/Pt/Au ohmic contacts was near 1.09 × 10^sup -7^ ohm cm^sup 2^. For In N nanowires with diameters
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-006-0131-z