Low-temperature crystallization of sol–gel-derived lead zirconate titanate thin films using 2.45 GHz microwaves

Lead zirconate titanate (PZT) thin films of thickness 420 nm were deposited on Pt/Ti/SiO 2/Si substrate using a spin coating sol–gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450 °C for 30 min. The film has a high perovskite content and high crystallinity wi...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2007-01, Vol.515 (5), p.2891-2896
Main Authors: Bhaskar, Ankam, Chang, T.H., Chang, H.Y., Cheng, S.Y.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Hysteresis loops
Lead zirconate titanate
Microwave annealing
Physics
Surface roughness
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Lead zirconate titanate (PZT) thin films of thickness 420 nm were deposited on Pt/Ti/SiO 2/Si substrate using a spin coating sol–gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450 °C for 30 min. The film has a high perovskite content and high crystallinity with a full width at half maximum of 0.35°. The surface roughness of the PZT thin film was 1.63 nm. Well-saturated ferroelectric properties were obtained with a remanent polarization of 46.86 μC/cm 2 and coercive field of 86.25 kV/cm. The film also exhibited excellent dielectric properties with a dielectric constant of 1140 and a dissipation factor of 0.03. These properties are superior to those obtained by conventional annealing at a temperature of 700 °C for 30 min.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2006.08.044