Ultrathin Silicon Micropackaging for RF MEMS Devices

In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon waf...

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2006-01, Vol.9 (2), p.G44-G48
Main Authors: Kim, Y.-K., Park, Y.-K., Kim, J.-K., Kim, S.-W., Ju, B.-K.
Format: Article
Language:English
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Summary:In this paper we report a technology for lightweight, small radio-frequency (rf) microelectromechanical system packaging with a short electrical path length. We used an ultrathin silicon substrate as the packaging substrate. Via holes for vertical feed-through were fabricated on the thin silicon wafer. Then, bottom-up gold electroplating was applied to fill via holes. For hermetic sealing, gold-gold direct metal bonding was used in the sealing line. The packaged rf device has a reflection loss below -22dB and an insertion loss of -0.05to-0.08dB. Therefore, with the ultrathin silicon wafer, a lightweight, small device package can be constructed.
ISSN:1099-0062
1944-8775
DOI:10.1149/1.2150166