A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling

A new statistical model is presented for the hard breakdown distribution including digital soft breakdown as observed on ultra-thin gate dielectrics, allowing for consistent area scaling of experimental time dependent hard breakdown data and extrapolation to low percentiles. It predicts a smaller re...

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Bibliographic Details
Published in:Microelectronic engineering 2007-09, Vol.84 (9), p.1925-1928
Main Authors: Roussel, Ph.J., Degraeve, R., Sahhaf, S., Groeseneken, G.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Hard breakdown
Materials
Reliability modeling
TDDB
Ultra-thin gate dielectrics reliability
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Summary:A new statistical model is presented for the hard breakdown distribution including digital soft breakdown as observed on ultra-thin gate dielectrics, allowing for consistent area scaling of experimental time dependent hard breakdown data and extrapolation to low percentiles. It predicts a smaller reliability margin than would be obtained through direct convolution of the SBD and wearout distributions. The paper reveals that failure criteria based upon multiple soft breakdowns claiming extra reliability margin have to be treated with caution, as they lead to area dependent specifications.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2007.04.067