A study of mixtures of HfO2 and TiO2 as high-k gate dielectrics

HfxTi1-xO2 films have been deposited by chemical vapor deposition. Permittivities of approximately 50 have been obtained. The films are stable up to 1000 deg C. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, t...

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Bibliographic Details
Published in:Microelectronic engineering 2004-04, Vol.72 (1-4), p.263-266
Main Authors: CHEN, F, BIN, X, HELLA, C, SHI, X, GLADFELTER, W. L, CAMPBELL, S. A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:HfxTi1-xO2 films have been deposited by chemical vapor deposition. Permittivities of approximately 50 have been obtained. The films are stable up to 1000 deg C. The interface properties and charge trapping appear to depend on composition. For films with approximately equal Hf and Ti concentration, transistor characteristics and inversion layer mobilities are comparable to those obtained when using pure HfO2.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2004.01.001