SiC-DACFET

The nm-range abrupt doping profiles in SiC epitaxial layers are stable even after the high temperature process because SiC crystal exhibits little diffusion of impurities. Growth of the SiC delta-doped layers have been reported by our group and the others. We believe that the well-designed delta-dop...

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Bibliographic Details
Published in:Microelectronic engineering 2006, Vol.83 (1), p.135-138
Main Author: Kitabatake, Makoto
Format: Article
Language:English
Subjects:
Applied sciences
Channel mobility
Compound structure devices
Delta-doped accumulation channel MOSFET
Delta-doping
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
On resistance
Other multijunction devices. Power transistors. Thyristors
Pulse-doping
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The nm-range abrupt doping profiles in SiC epitaxial layers are stable even after the high temperature process because SiC crystal exhibits little diffusion of impurities. Growth of the SiC delta-doped layers have been reported by our group and the others. We believe that the well-designed delta-doped epitaxial layers for the FET channels extend possibility of the power SiC FET. We proposed the SiC Delta-doped Accumulation Channel MOSFET (DACFET) consisting of the delta-doped layers for MOS channel and reported its high MOS-channel mobility. The vertical hot-wall-type CVD system was used to grow SiC epitaxial layers. The pulse valve, which supplied short (100 cm 2/V s. The vertical DACFET, whose blocking voltage was >600 V, was fabricated with the double-implantation MOS process. R on of the normally-off 2 μm-gate DACFET was measured to be 13 mΩ cm 2. Current density was observed to be >140 A cm −2 larger than Si-IGBT. Shortening of gate length and unit cell size of the SiC-DACFET using high-resolution lithography will result in R on
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2005.10.056