A Precursor-Based Route to ZnSe Nanowire Bundles

A large number of one‐dimensional bundles of ZnSe nanowires with diameters ranging from 15–20 nm and lengths of up to tens of micrometers have been prepared via the thermal treatment of a ribbon‐like precursor (ZnSe·3ethylenediamine), which has been synthesized by a mixed solvothermal route, in an a...

Full description

Saved in:
Bibliographic Details
Published in:Advanced functional materials 2005-11, Vol.15 (11), p.1787-1792
Main Authors: Xiong, S., Shen, J., Xie, Q., Gao, Y., Tang, Q., Qian, Y. T.
Format: Article
Language:English
Subjects:
inorganic
Nanowires
Nanowires, inorganic
Optoelectronics
Solvothermal synthesis
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A large number of one‐dimensional bundles of ZnSe nanowires with diameters ranging from 15–20 nm and lengths of up to tens of micrometers have been prepared via the thermal treatment of a ribbon‐like precursor (ZnSe·3ethylenediamine), which has been synthesized by a mixed solvothermal route, in an argon atmosphere. The as‐obtained precursor has been characterized by powder X‐ray diffraction (XRD), transmission electron microscopy (TEM), IR spectroscopy, thermogravimetric analysis, and elemental analysis. XRD and high‐resolution TEM characterization reveal that the as‐synthesized ZnSe nanowires have the single‐crystal hexagonal wurtzite structure with the [001] growth direction. The surface chemical composition of ZnSe nanowires has been studied by X‐ray photoelectron spectroscopy. The cooperative action of the mixed solvents may be responsible for the formation of the morphology of the resulting products. Room‐temperature photoluminescence measurements indicate the as‐grown ZnSe nanostructures have a strong emission peak centered at 587 nm and two weak emission peaks centered at 435 and 462 nm. The strong emission from the ZnSe nanostructures reveals their potential as building blocks for optoelectronic devices. One‐dimensional bundles of ZnSe nanowires have been successfully synthesized by the thermal treatment of a ribbon‐like precursor at 600 °C (see Figure), which was prepared by a mixed solvothermal route. The cooperative action of the mixed solvents may be responsible for the morphology of the resulting products.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.200500069