Role of excited nitrogen species in the growth of GaN by RF–MBE

Optical emission spectroscopy (OES) was used with the combinatorial growth method to investigate the behavior of excited nitrogen species in the growth of gallium nitride (GaN) using radio-frequency molecular beam epitaxy (RF–MBE). To determine the amounts of each excited nitrogen species in the nit...

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Bibliographic Details
Published in:Journal of crystal growth 2006-07, Vol.292 (2), p.221-226
Main Authors: Kikuchi, T., Somintac, A.S., Ariyada, O., Wada, M., Ohachi, T.
Format: Article
Language:English
Subjects:
A1. Optical emission spectroscopy
A3. Combinatorial growth
A3. Radio-frequency molecular beam epitaxy
B1. Nitrides
B2. Semiconducting III–V materials
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:Optical emission spectroscopy (OES) was used with the combinatorial growth method to investigate the behavior of excited nitrogen species in the growth of gallium nitride (GaN) using radio-frequency molecular beam epitaxy (RF–MBE). To determine the amounts of each excited nitrogen species in the nitrogen plasma, the integrated OES intensity (IOI) method was proposed. The IOI measurements revealed the following: more nitrogen ions ( N 2 + ) were produced at the lower inlet pressure of nitrogen, the productivity of nitrogen atoms (N) and excited nitrogen atoms (N *) had an optimum value at some inlet pressure, whereas the productivity of excited nitrogen molecules ( N 2 * ) saturated as the inlet pressure increased. The combination of the IOI measurement and the combinatorial growth of GaN showed that not only N and N *, but also the long-lifetime A 3 Σ u + state of N 2 * contributed to GaN growth using RF–MBE.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.04.019