Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

In this work, the results obtained in growth of Ge(Si) self-assembled islands on relaxed Si 1− x Ge x /Si(0 0 1) buffer layers ( x ∼ 25%) and their photoluminescence study are presented. It is found out that growth of Ge(Si)/Si 1− x Ge x islands proceeds with an abrupt change in the surface morpholo...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-12, Vol.124, p.466-469
Main Authors: Shaleev, M.V., Novikov, A.V., Kuznetsov, O.A., Yablonsky, A.N., Vostokov, N.V., Drozdov, Yu.N., Lobanov, D.N., Krasilnik, Z.F.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Heterostructures
Photoluminescence
Self-assembled islands
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Summary:In this work, the results obtained in growth of Ge(Si) self-assembled islands on relaxed Si 1− x Ge x /Si(0 0 1) buffer layers ( x ∼ 25%) and their photoluminescence study are presented. It is found out that growth of Ge(Si)/Si 1− x Ge x islands proceeds with an abrupt change in the surface morphology that is similar to the earlier observed transition (from dome to hut islands with a decreasing Ge growth temperature) in the case of island growth on Si(0 0 1) substrates. It is revealed that in growth of Ge(Si)/Si 1− x Ge x islands, in contrast to the Ge(Si)/Si(0 0 1) islands case, the interval of growth temperatures, in which there is a change in the islands morphology (dome–hut transition) shifts towards higher temperatures. For the first time a photoluminescence signal from Ge(Si) self-assembled islands embedded in a strained Si layer is observed.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2005.08.015