Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN/GaN) multi-buffer layer

AlN and AlGaN epitaxial layers with Al composition of 0.6–0.8 were grown by low-pressure metal organic vapor phase epitaxy on a (0 0 0 1) 6H–SiC substrate using the (AlN/GaN) multi-buffer layer structure (MBLS). Strain of the grown layer could be controlled by structure of the inserted (AlN/GaN) MBL...

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Bibliographic Details
Published in:Journal of crystal growth 2007, Vol.298, p.345-348
Main Authors: Niikura, E., Murakawa, K., Hasegawa, F., Kawanishi, H.
Format: Article
Language:English
Subjects:
A1. AlN
A1. Crystal quality
A1. FWHM of XRC
A2. AlGaN
A3. (AlN/GaN) multi-buffer layer
A3. LP-MOVPE
B2. Strain control
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other semiconductors
Physics
Single-crystal and powder diffraction
Specific materials
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
Vapor phase epitaxy
growth from vapor phase
X-ray diffraction and scattering
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Summary:AlN and AlGaN epitaxial layers with Al composition of 0.6–0.8 were grown by low-pressure metal organic vapor phase epitaxy on a (0 0 0 1) 6H–SiC substrate using the (AlN/GaN) multi-buffer layer structure (MBLS). Strain of the grown layer could be controlled by structure of the inserted (AlN/GaN) MBLS. It was found that the crystal quality of the grown layer could be improved with increase of the tensile strain in a-axis (compressive strain in c-axis): full-width at half-maximum (FWHM) of X-ray rocking curves (XRC) of both (0 0 0 2) plane ( ω scan) and (1 0 1¯ 2) plane ( ϕ scan) were decreased from 1530 arcsec to 79 arcsec and 3962 arcsec to 853 arcsec for the AlN template, respectively. FWHM of the ϕ scan XRC was several times larger than that of the ω scan, though the former was roughly proportional to the latter.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2006.10.152