Modelization of epitaxial GaAs X-ray detectors

X-ray detectors are fabricated with non-intentionally doped thick epitaxial GaAs layers grown by a chemical technique. They are p +/i/n + structures in which the highly doped p- and n-type layers are made by ion implantation on both faces of the i epilayers. In order to understand the behaviour of c...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2006-06, Vol.90 (10), p.1498-1503
Main Authors: Mañez, N., Sun, G.C., Ben Chouikha, M., Algani, C., Alquié, G., Verdeil, C., Talbi, N., Khirouni, K., Bourgoin, J.C.
Format: Article
Language:English
Subjects:
Epitaxy
Exact sciences and technology
GaAs
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
Space charge region
X- and γ-ray instruments and techniques
X- and γ-ray sources, mirrors, gratings and detectors
X-ray detectors
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Summary:X-ray detectors are fabricated with non-intentionally doped thick epitaxial GaAs layers grown by a chemical technique. They are p +/i/n + structures in which the highly doped p- and n-type layers are made by ion implantation on both faces of the i epilayers. In order to understand the behaviour of charge collection, we modelize the capacitance–voltage characteristics of such structures, which are then compared with experimental data.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2005.10.014