Growth and characterization of Sn doped ZnO thin films by pulsed laser deposition

Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto single‐crystal Si(001) substrates at an oxygen pressure of 2 × 10–2 mbar and substrate temperature of 600 °C. The targets used were high density Sn:ZnO pellets with different Sn concentrations produce...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2006-05, Vol.203 (6), p.1383-1389
Main Authors: López-Ponce, E., Costa-Krämer, J. L., Martín-González, M. S., Briones, F., Fernández, J. F., Caballero, A. C., Villegas, M., de Frutos, J.
Format: Article
Language:English
Subjects:
61.10.Nz
68.37.Ps
73.61.Ga
75.50Pp
81.15.Fg
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Magnetic properties and materials
Magnetic semiconductors
Physics
Studies of specific magnetic materials
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Summary:Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto single‐crystal Si(001) substrates at an oxygen pressure of 2 × 10–2 mbar and substrate temperature of 600 °C. The targets used were high density Sn:ZnO pellets with different Sn concentrations produced by mixing ZnO and SnO2 by conventional ceramic routes. A deep structural and electrical characterization was carried out in order to determine the role of an increasing Sn nominal concentration on the ZnO film transport properties. Only films with a nominal 0.1 at% Sn show an improvement of the transport properties, lower resistivity and higher donor concentration, with respect to pure ZnO thin films. For films with larger Sn nominal concentrations segregated SnZnO phases appear that lead to larger film resistivities and no increase in donor concentration. The 0.1 at% Sn film is accordingly a good candidate to study the possible room temperature ferromagnetism when co doping with Mn. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200566177