Fluorine Profile Distortion upon Annealing by the Presence of a CVD Grown Boron Box

We provide experimental evidence of the distortion of a F profile by the presence of a CVD grown B box. After annealing, a depletion in the F profile is observed fitting the position of the immobile part of B profile. To study this phenomenon further experiments were designed and atomistic simulatio...

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Bibliographic Details
Main Authors: Lopez, P, Pelaz, L, Duffy, R, Meunier-Beillard, P, van der Tak, K, Roozeboom, F, Maas, G
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:We provide experimental evidence of the distortion of a F profile by the presence of a CVD grown B box. After annealing, a depletion in the F profile is observed fitting the position of the immobile part of B profile. To study this phenomenon further experiments were designed and atomistic simulations were done using a recently developed F model. In this model F complexes with both Si interstitials (F-I) and vacancies (F-V) are included. The formation of Boron-Interstitial Clusters is found to reduce the local Si interstitials defect concentration. This feature may be responsible for the reported F distortion by the presence of a B box.
ISSN:0094-243X
DOI:10.1063/1.2401454