Mechanisms of Electrical Switching of Ultrathin CoO/Pt Bilayers

We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlying antiferromagnetic switching mechanism. Surprisingly, we find that for ultrathin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetores...

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Bibliographic Details
Published in:Nano letters 2024-02, Vol.24 (5), p.1471-1476
Main Authors: Schmitt, Christin, Rajan, Adithya, Beneke, Grischa, Kumar, Aditya, Sparmann, Tobias, Meer, Hendrik, Bednarz, Beatrice, Ramos, Rafael, Niño, Miguel Angel, Foerster, Michael, Saitoh, Eiji, Kläui, Mathias
Format: Article
Language:English
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Summary:We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlying antiferromagnetic switching mechanism. Surprisingly, we find that for ultrathin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing these results to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the details of the reorientation of the Néel vector in ultrathin CoO­(4 nm). This allows us to understand how opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin–orbit torque-based switching mechanism that can dominate in very thin films.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c02890