Device degradation model for polysilicon-oxide-nitride-oxide-silicon (SONOS) based on anode hole fluence

The cause of the device degradation in a SONOS structure has been investigated with using two different gate dielectric structures of the stacked oxide-nitride-oxide (ONO) and conventional single-layered oxide. It is found that the device degradation behaviors for the stacked-ONO gate structure have...

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Bibliographic Details
Published in:Microelectronic engineering 2005-06, Vol.80, p.329-332
Main Authors: Yi, Jeong-Hyong, Lee, Sang-Don, Ahn, Jin-Hong, Shin, Hyungcheol, Park, Young-June, Min, Hong Shick
Format: Article
Language:English
Subjects:
anode hole fluence
anode hole injection model
Applied sciences
Compound structure devices
dielectric degradation
Electronics
Exact sciences and technology
gate polarity dependence
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SONOS
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Summary:The cause of the device degradation in a SONOS structure has been investigated with using two different gate dielectric structures of the stacked oxide-nitride-oxide (ONO) and conventional single-layered oxide. It is found that the device degradation behaviors for the stacked-ONO gate structure have different polarity dependence from the conventional single oxide gate, especially under positive F-N gate stress condition. It is shown that the bi-modal device degradation behaviors can be explained by the fluence of high energetic anode hole based on the anode hole injection (AHI) model.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2005.04.086