The influence of ZnO nanorods on the poly-(3,4-ethylenedioxythiophene):poly-(styrenesulphonic acid) buffer layer in a polymer light-emitting diode

The luminescence efficiency of polymer light-emitting diodes is enhanced to more than double by doping ZnO nanorods into the poly-(3,4-ethylenedioxythiophene):poly-(styrenesulphonic acid) (PEDOT:PSS) hole buffer layer. It was demonstrated, by means of the optical and electrical characteristics and R...

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Bibliographic Details
Published in:Nanotechnology 2005-12, Vol.16 (12), p.2861-2864
Main Authors: Zhang, T, Xu, Z, Tao, D L, Teng, F, Li, F S, Zheng, M J, Xu, X R
Format: Article
Language:English
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Summary:The luminescence efficiency of polymer light-emitting diodes is enhanced to more than double by doping ZnO nanorods into the poly-(3,4-ethylenedioxythiophene):poly-(styrenesulphonic acid) (PEDOT:PSS) hole buffer layer. It was demonstrated, by means of the optical and electrical characteristics and Raman spectroscopy, that there is a certain interaction between the thiophene of PEDOT and the ZnO nanorods, which decreased the amount of defect states at the interface between the PEDOT hole buffer layer and the poly(2-methoxy-5-(2'-ethyl-hexyloxy)1,4-phenylene vinylene) (MEH-PPV) emitting layer and thus increased the device efficiency and stability.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/16/12/021