Impact of Ce doping on the optoelectronic and structural properties of a CsPbIBr2 perovskite solar cell

This paper provides a detailed analysis of pure CsPbIBr2 and 4% Ce-doped CsPbIBr2 perovskite films, emphasizing their structural, optical and photovoltaic properties. X-ray diffraction confirms a predominant cubic perovskite phase in both samples, with Ce doping leading to the increased crystal size...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2024-01, Vol.26 (5), p.4166-4173
Main Authors: Khan, M I, Mujtaba, Ali, Mahvish Fatima, Marzouki, Riadh, Hussain, Saddam, Anwar, Tauseef
Format: Article
Language:English
Subjects:
Cerium
Doping
Electron affinity
Energy bands
Open circuit voltage
Optical properties
Optoelectronics
Permittivity
Perovskites
Photovoltaic cells
Short circuit currents
Solar cells
Structural analysis
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Summary:This paper provides a detailed analysis of pure CsPbIBr2 and 4% Ce-doped CsPbIBr2 perovskite films, emphasizing their structural, optical and photovoltaic properties. X-ray diffraction confirms a predominant cubic perovskite phase in both samples, with Ce doping leading to the increased crystal size (21 nm to 32 nm). UV-vis spectroscopy reveals a reduced bandgap energy (2.2 eV to 2.1 eV) with Ce doping. Dielectric constant analysis indicates the enhanced permittivity of the Ce-doped sample, crucial for solar-cell light trapping. Energy band structure analysis demonstrates improved photovoltaic cell performance with Ce doping, yielding higher open-circuit voltage, short-circuit current, and efficiency (9.71%) compared to pure CsPbIBr2 (8.02%). Ce doping mitigates electron–hole recombination, enhancing cell stability, electron affinity, and power output. This research underscores the potential of cost-effective, efficient, and stable CsPbIBr2 perovskite solar cells.
ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp05339c