Characterization of frequency tuning using focused ion beam platinum deposition

This paper presents and characterizes focused ion beam (FIB) platinum (Pt) deposition as a novel frequency tuning method for micromechanical resonators. FIB Pt deposited tuning was performed at room temperature and in contrast to other reported methods, frequency changes were achieved without any de...

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Bibliographic Details
Published in:Journal of micromechanics and microengineering 2007-02, Vol.17 (2), p.213-219
Main Authors: Enderling, Stefan, Hedley, John, Jiang, Liudi, Cheung, Rebecca, Zorman, Christian, Mehregany, Mehran, Walton, Anthony J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mechanical engineering. Machine design
Mechanical instruments, equipment and techniques
Microelectronic fabrication (materials and surfaces technology)
Micromechanical devices and systems
Physics
Precision engineering, watch making
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:This paper presents and characterizes focused ion beam (FIB) platinum (Pt) deposition as a novel frequency tuning method for micromechanical resonators. FIB Pt deposited tuning was performed at room temperature and in contrast to other reported methods, frequency changes were achieved without any device failure. To perform the tuning, Pt was deposited on a 13 mumX 5 mum surface area at the free end of 3C silicon carbide (SiC) and polysilicon cantilever resonators in thicknesses ranging from 0.5 mum to 2.6 mum. To determine the amount of tuning, the resonant frequency of SiC and polysilicon devices was measured before and after Pt deposition. Frequency measurements performed before Pt deposition found that SiC resonators operated at higher resonant frequencies and quality (Q)-factors than their polysilicon counterparts. Measurements after Pt deposition on SiC and polysilicon resonators confirmed the predicted maximum frequency change of -15.5% made by FEM simulations and analytical modelling. Due to their lower mass, polysilicon resonators showed a larger frequency change than their SiC counterparts. A Q-factor decrease was observed for SiC and polysilicon resonators due to thermoelastic damping associated with the deposited Pt and surface contamination.
ISSN:0960-1317
1361-6439
DOI:10.1088/0960-1317/17/2/005