Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

In the present study, bismuth telluride compound thin film was grown by means of electrochemical atomic layer epitaxy (ECALE) with an automated thin layer flow cell deposition system. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. Because developing a contact pote...

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Bibliographic Details
Published in:Electrochimica acta 2005-07, Vol.50 (20), p.4041-4047
Main Authors: Zhu, W., Yang, J.Y., Gao, X.H., Bao, S.Q., Fan, X.A., Zhang, T.J., Cui, K.
Format: Article
Language:English
Subjects:
Bismuth telluride
Cross-disciplinary physics: materials science
rheology
ECALE
Electrodeposition, electroplating
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Thermoelectric material
Thin film
UPD
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Summary:In the present study, bismuth telluride compound thin film was grown by means of electrochemical atomic layer epitaxy (ECALE) with an automated thin layer flow cell deposition system. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. Because developing a contact potential between the substrate and the growing semiconductor, the deposition potential adjustment is necessary for the first 30 or more cycles of each component. The dependence of the deposit as a function of the deposition potential adjustment slope has been investigated. The results show that an excess elemental Bi existed at a slope of −2 mV/p (p indicates per cycle), indicating that this is a lack of deposition at the potential. Single-phase Bi 2Te 3 compound could be obtained between −4 and −6 mV/p. Bi 2Te 3 and Bi 4Te 3 coexistence is observed at a slope of −10 mV/p. The EDS data indicates that the stoichiometry of compound is consistent with XRD result. SEM studies show that the deposits are inhomogeneous and have an micron sized particles morphology.
ISSN:0013-4686
1873-3859
DOI:10.1016/j.electacta.2005.01.003