Crystallization Behavior and Physical Properties of Sb-Excess Ge2Sb2+xTe5 Thin Films for Phase Change Memory (PCM) Devices

The crystallization behavior of antimony(Sb)-excess Ge2Sb2+xTe5 was examined. Sb-excess GST showed crystallization (Tc) and melting (TM) temperatures of 205 and 550DGC, respectively, slightly higher Tc and lower TM values than stoichiometric Ge2Sb2Te5 compounds. It also showed a substantially differ...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2006-01, Vol.153 (3), p.G234-G237
Main Authors: Ryu, S O, Yoon, S M, Choi, K J, Lee, N Y, Park, Y S, Lee, S Y, Yu, B G, Park, J B, Shin, W C
Format: Article
Language:English
Online Access:Get full text
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Summary:The crystallization behavior of antimony(Sb)-excess Ge2Sb2+xTe5 was examined. Sb-excess GST showed crystallization (Tc) and melting (TM) temperatures of 205 and 550DGC, respectively, slightly higher Tc and lower TM values than stoichiometric Ge2Sb2Te5 compounds. It also showed a substantially different crystallization behavior compared to the stoichiometric Ge2Sb2Te5 composition. The resulting Sb-excess GeSbTe thin film showed a grain growth dominated crystallization behavior.
ISSN:0013-4651
DOI:10.1149/1.2164768