Building and testing submicrometer metallic (gold) air-bridges for nanotransport applications

The properties of submicrometer gold air-bridges are investigated for their suitability as elements of an electronic device. The fabrication procedure of a gated vertical quantum dot resonant tunneling diode structure implementing air-bridges is presented as a demonstration. Our investigations show...

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Bibliographic Details
Published in:Microelectronic engineering 2005-03, Vol.78, p.374-380
Main Authors: Borzenko, T., Hock, V., Supp, D., Gould, C., Schmidt, G., Molenkamp, L.W.
Format: Article
Language:English
Subjects:
Air-bridges
Applied sciences
Diodes
Electron beam lithography
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
Nanostructures
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The properties of submicrometer gold air-bridges are investigated for their suitability as elements of an electronic device. The fabrication procedure of a gated vertical quantum dot resonant tunneling diode structure implementing air-bridges is presented as a demonstration. Our investigations show that air-bridges produced by multiple acceleration voltage lithography exhibit excellent mechanical and electrical stability for nanotransport application.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2004.12.050