Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process

In the practical thin-film transistor (TFT) SRAM process, the rapid thermal contact annealing (RTA) would seriously deteriorate the subthreshold characteristics of TFTs but it can improve the maximum transconductance. We suggest that these degradations are due to the generation of the deep states an...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1997-09, Vol.44 (9), p.1561-1562
Main Authors: Lee, Kan Yuan, Pang, Yean Kuen, Chen, Chii-Wen, Liang, Mong Song, Wuu, Shou Gwo
Format: Article
Language:English
Subjects:
Boron
Integrated circuit technology
Leakage current
Random access memory
Rapid thermal annealing
Rapid thermal processing
Simulated annealing
Thermal degradation
Thin film transistors
Ultra large scale integration
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Summary:In the practical thin-film transistor (TFT) SRAM process, the rapid thermal contact annealing (RTA) would seriously deteriorate the subthreshold characteristics of TFTs but it can improve the maximum transconductance. We suggest that these degradations are due to the generation of the deep states and we find these degradations can be recovered by a low-temperature anneal in H/sub 2//N/sub 2/ gas ambient.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.622618