Nanocrystalline Sm–Fe composites fabricated by pulse laser deposition at 157 nm

Sm–Fe thin films were deposited on a Si wafer coated with a ∼100 nm thick layer of Ta by ablating a solid Sm–Fe target. The Sm–Fe target was ablated using a molecular fluorine laser with λ = 157 nm at low laser energy of ∼25 mJ/pulse. The thickness of the deposited amorphous film (in vacuum) was ∼20...

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Bibliographic Details
Published in:Applied surface science 2005-07, Vol.248 (1), p.349-354
Main Authors: Kobe, S., Žužek, K., Sarantopoulou, E., Samardžija, Z., Kollia, Z., Cefalas, A.C.
Format: Article
Language:English
Subjects:
157 nm
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Impact phenomena (including electron spectra and sputtering)
Laser deposition
Laser-beam impact phenomena
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Morphology
Nanocrystalline
Physics
Pulse laser deposition
Rare-earth magnets
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Thin films
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Summary:Sm–Fe thin films were deposited on a Si wafer coated with a ∼100 nm thick layer of Ta by ablating a solid Sm–Fe target. The Sm–Fe target was ablated using a molecular fluorine laser with λ = 157 nm at low laser energy of ∼25 mJ/pulse. The thickness of the deposited amorphous film (in vacuum) was ∼20 nm and the dimensions of the nanocrystals deposited on the Si–Ta substrate (in He atmosphere) varied between 20 and 500 nm. Using the low energy laser for growing Sm–Fe nanocrystals by pulse laser deposition (PLD) results in a composition, which remains the same as the composition of the initial target. The morphology and the type of the films depended on the depositing experimental conditions.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2005.03.049