Loading…
Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and d.c. drain current
We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1-50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-/spl mu/m-gate pseudomorphic HEMT,...
Saved in:
Published in: | IEEE transactions on microwave theory and techniques 1995-01, Vol.43 (1), p.213-216 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1-50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-/spl mu/m-gate pseudomorphic HEMT, we have been able to establish the accuracy of the refined model, which predicts the device's d.c. current and S-parameters as a function of the applied drain and gate biases to within an accuracy of /spl sim/5%. The core of the model and, in particular, its bias dependence, are directly dependent on the HEMT wafer structure and the physical gate length.< > |
---|---|
ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/22.362988 |